Image of the Week - March 15, 2011

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Strain Profiles and Electronic Structure of a Self-Assembled Quantum Ring

This compound image illustrates a theoretical investigation of the strain profiles and electronic structure of a self-assembled quantum ring. The authors report anomalous strain relaxation and an enhancement of the light-hole character due to the GaAs layer on the InAs/InGaAs quantum ring. The analysis of the band structure of the strained InGaAs compound explains the half-well and half-barrier character of the strained GaAs layer embedded in the InP matrix. This work was published as a Rapid Research Letter [physica status solidi (RRL), Vol. 2-3/2009: 76-78], and can be located and read in full here: http://www3.interscience.wiley.com/journal/112716025/home

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Contact: jleburto@illinois.edu

Uploaded Tue Mar 15 10:24:38 2011 by Scott Jay Robinson

Updated Tue Mar 15 10:47:32 2011 by Dean Karres