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Strain Profiles and Electronic Structure of a Self-Assembled Quantum Ring

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Created 03/15/2011

This compound image illustrates a theoretical investigation of the strain profiles and electronic structure of a self-assembled quantum ring. The authors report anomalous strain relaxation and an enhancement of the light-hole character due to the GaAs layer on the InAs/InGaAs quantum ring. The analysis of the band structure of the strained InGaAs compound explains the half-well and half-barrier character of the strained GaAs layer embedded in the InP matrix. This work was published as a Rapid Research Letter [physica status solidi (RRL), Vol. 2-3/2009: 76-78], and can be located and read in full here: http://www3.interscience.wiley.com/journal/112716025/home

Credits

  • Jean-Pierre LeBurton , Nanoelectronics and Nanomaterials Group
  • Euijoon Yoon , Nanoelectronics and Nanomaterials Group
  • Kwangmin Park , Nanoelectronics and Nanomaterials Group
  • Pilkyoung Moon , Nanoelectronics and Nanomaterials Group
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